EDS2532EEBH-75

www.DataSheet4U.com PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532EEBH-75 (8M words × 32 bits) Description The EDS2532EEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 90-ball FBGA. Pin Configurations /xxx indicate active low signal. 90-ball FBGA 1 2 3 4 5 6 7 8 9 A DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 /CAS VDD DQ6 DQ1 Features 1.8V power supply Clock frequency: 133MHz (max.) LVCMOS interface Single pulsed /RAS ×32 organization 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable burst length (BL): 1, 2, 4, 8 and full page 2 variations of burst sequence  Sequential (BL = 1, 2, 4, 8, full page)  Interleave (BL = 1, 2, 4, 8) Programmable /CAS latency (CL): 2, 3 Programmable driver strength: Half , Quarter Byte control by DQM Address  4K Row address /512 column address Refresh cycles  4096 refresh cycles/64ms 2 variations of refresh  Auto refresh  Self refresh FBGA package with lead free solder (Sn-Ag-Cu)  RoHS compliant B DQ28 VDDQ VSSQ C VSSQ DQ27 DQ25 D VSSQ DQ29 DQ30 E VDDQ DQ31 NC A3 A6 NC A9 NC VSS DQ16 VSSQ DQM2 VDD A0 BA1 /CS A1 A11 /RAS F VSS DQM3 G A4 A5 A8 CKE NC H A7 J CLK K DQM1 /WE DQM0 DQ7 VSSQ DQ5 VDDQ DQ3 VDDQ L VDDQ DQ8 M VSSQ DQ10 DQ9 N VSSQ DQ12...