PRELIMINARY DATA SHEET
512M bits DDR-II SDRAM
EDE5104GBSA (128M words × 4 bits) EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits)
Description
The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA package. The EDE5116GB is a 512M bits DDR-II SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball .
512M bits DDR-II SDRAM
PRELIMINARY DATA SHEET
512M bits DDR-II SDRAM
EDE5104GBSA (128M words × 4 bits) EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits)
Description
The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA package. The EDE5116GB is a 512M bits DDR-II SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball µBGA package.
Features
• 1.8V power supply • Double-data-rate architecture: two data transfers per clock cycle • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver • DQS is edge aligned with data for READs: centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation • Data mask (DM) for write data • Burst lengths: 4, 8 • /CAS Latency (CL): 3, 4, 5 • Auto precharge operation for each burst access • Auto refresh and self refresh modes • 7.8µs average periodic refresh interval • 1.8V (SSTL_18 compatible) I/O • Posted CAS by programmable additive latency for better command and data bus efficiency • Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality • Programmab.