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ED1502 Datasheet

Part Number ED1502
Manufacturers NXP
Logo NXP
Description NPN general purpose transistor
Datasheet ED1502 DatasheetED1502 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • Low current (max. 25 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification. 1 handbook, halfpage ED1502 PINNING PIN 1 2 3 emitter base collector DESCRIPTION DESCRIPTION NPN transistor in a plastic TO.

  ED1502   ED1502






Part Number ED1502
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet ED1502 DatasheetED1502 Datasheet (PDF)

ED1502 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-92(R) NPN 。Silicon NPN transistor in a TO-92(R) Plastic Package.  / Features ,。 Small reverse transfer capacitance, low noise figure.  / Applications ,、、、。 High frequency amplifier applications, FM,RF,MIX,IF amplifier applications. / Equivalent Circuit / Pinning 123 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 36~55 B 48~75 C 66~100 D 84~127 E 105~210 ht.

  ED1502   ED1502







NPN general purpose transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • Low current (max. 25 mA) • Low voltage (max. 20 V) • High gain. APPLICATIONS • General purpose switching and amplification. 1 handbook, halfpage ED1502 PINNING PIN 1 2 3 emitter base collector DESCRIPTION DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to TO-92; SOT54 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 40 20 4 25 25 25 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to TO-92; SOT54 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off curre.


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