ECP200

PRELIMINARY DATA SHEET ECP200 2.0 WATT POWER AMPLIFIER Product Features 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems Packages Available QFN-16 (4x4mm) SOIC-8 Product Description The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50 Ohms input impedance and pre-matched output. It is optimized for multicarriers applications and allows customers to use class A or class AB operations. The devices can be easily matched in output side to obtain the optimum power, linearity and efficiency. The product is targeted for use as driver amplifier for wireless infrastructure applications. It is available in two surface-mount plastic packages: QFN-16 (4x4mm) and SOIC-8. Electrical Specifications Test Conditions: Ta = 25 C, VCC = +5 V Icq = 800 mA (class A operation) SYMBOL F G P1dB OIP3 ACPR1 PARAMETER Frequency Gain (Small Signal) Output Power @ 1dB Compression Output Third Order Intercept Pout = 24.5dBm (WCDMA) Gain Flatness (120MHz Band) RL in RL out Icop Vde Input Return Loss, 50 Ohm Output Return Loss, 50 Ohm Operational Current @ P1dB Device Voltage f = 1960MHz f = 2140MHz f = 1960MHz f = 2140MH...