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ECH8305 Datasheet

Part Number ECH8305
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description General-Purpose Switching Device
Datasheet ECH8305 DatasheetECH8305 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8145 ECH8305 P-Channel Silicon MOSFET ECH8305 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) .

  ECH8305   ECH8305






Part Number ECH8309
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel Power MOSFET
Datasheet ECH8305 DatasheetECH8309 Datasheet (PDF)

Ordering number : ENA1418B ECH8309 P-Channel Power MOSFET –12V, –9.5A, 16mΩ, Single ECH8 http://onsemi.com Features • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic s.

  ECH8305   ECH8305







Part Number ECH8309
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel Silicon MOSFET
Datasheet ECH8305 DatasheetECH8309 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA1418A ECH8309 SANYO Semiconductors DATA SHEET ECH8309 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% .

  ECH8305   ECH8305







Part Number ECH8308
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel Power MOSFET
Datasheet ECH8305 DatasheetECH8308 Datasheet (PDF)

Ordering number : ENA1182A ECH8308 P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 http://onsemi.com Features • Best suited for load switching • 1.8V drive • Protection diode in • Low ON-resistance • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Cond.

  ECH8305   ECH8305







Part Number ECH8308
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel Silicon MOSFET
Datasheet ECH8305 DatasheetECH8308 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA1182 ECH8308 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 Features • • • • General-Purpose Switching Device Applications Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbo.

  ECH8305   ECH8305







Part Number ECH8306
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel Silicon MOSFET
Datasheet ECH8305 DatasheetECH8306 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0302 ECH8306 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8306 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted o.

  ECH8305   ECH8305







General-Purpose Switching Device

www.DataSheet4U.com Ordering number : ENN8145 ECH8305 P-Channel Silicon MOSFET ECH8305 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --60 ±20 --4 --20 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-2A ID=--2A, VGS=-10V ID=--1A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-30V, VGS=--10V, ID=--4A VDS=-30V, VGS=--10V, ID=--4A VDS=-30V, V.


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