EC3H04B

Ordering number : ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.4 0.25 Low noise : NF=1.7dB typ (f=2GHz). High cut-off frequency : fT=8GHz typ (VCE=1V). Low operating voltage. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H04B] 0.15 2 0.05 1.0 0.65 3 0.5 0.25 0.05 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.6 0.5 Ratings 9 6 2 100 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre S21e21 S21e22 NF Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=10mA VCE=1V, IC=10mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=10mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=1V, IC=10mA, f=2GHz Ratings min typ max 1.0 10 100 6 8 1.1 0.85 4 5 12 1.7 2.5 1.5 180 GHz pF pF dB dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that ca...