E50A21VBS

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Zener Voltage : 21V(Typ.) POLARITY E50A21VBS (+ Type) E50A21VBR (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current IF(AV) IFSM Non-Repetitive Peak Reverse Surge Current (10mS) IRSM Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range VRSM VRM Tj Tstg RATING 50 380 (60Hz) 55 19 16 -40 215 -40 215 UNIT A A A V V E50A21VBS, E50A21VBR STACK SILICON DIFFUSED DIODE A K H EI JD DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2 TYP 0.5 Φ10.0+_ 0.2 0.4+_ 0.1x45 8.5 MAX 0.2+0.1 28.35+_ 0.5 F G B B-PF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Zener Voltage VZ Reverse Current IR Transient Thermal Resistance VF Breakdown Voltage Vbr Temperature Coefficient T Reverse Leakage Current Under High Temperature HIR Temperature Resistance Rth TEST CONDITION IFM=100A IZ=10mA VR=18V IFM=100A, IM=100mA, Pw=100mS Irsm=55A, Pw=10mS IZ=10mA Ta=150 , VR=18V DC total junction to case MIN. 19 - - - TYP. 21 - 15.7 MAX. 1.05 23 0.3 60 32 - UNIT V V A mV V mV/ - 100 A - 0.6 /W 2002. 4. 16 Revision No : 5 1/1 ...