SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES ᴌAverage Forward Current : IO=30A. ᴌR...
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES ᴌAverage Forward Current : IO=30A. ᴌReverse
Voltage : 200V(Min.)
POLARITY E30A2CPS (+ Type) E30A2CPR (- Type)
E30A2CPS, E30A2CPR
STACK SILICON DIFFUSED DIODE
D F2
E F1
G B
L1 L2
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Repetitive Peak Reverse
Voltage
VRRM
Non-Repetitive Peak Reverse
Voltage
PRM
Average Forward Current
IF(AV)
Peak 1 Cycle Surge Current
IFSM
Junction Temperature Storage Temperature Range
Tj Tstg
RATING
200
1.35 (Pulse duration 30ỌS
Non-repetitive) 30 350
(10mS Condition Half sine wave 1 cycle)
-40ᴕ200 -40ᴕ200
UNIT V
kW A A ᴱ ᴱ
A
DIM MILLIMETERS DIM MILLIMETERS
A Φ11.7+0.1/-0 F1
0.32
B 3.85+0/-0.2 D Φ1.45+_ 0.1
F2 G
3.1 0.5
E 1.55 L1 8.4 MAX
DIM TYPE POLARITY L2 S R
MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5
PF
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Peak Forward
Voltage Reverse
Voltage Repetitive Peak Reverse Current Reverse Recovery Time
VFM VRM IRRM
trr
Transient Thermal Resistance
ẤVF
Reverse Leakage Current Under High Temperature
HIR
Temperature Resistance
Rth
TEST CONDITION IFM=100A IR=5mA VR=200V IF=-IR 100mA IFM=100A, Im=100mA, Pt=100mS
Ta=150ᴱ, VR=VRM
Junction to Case Junction to Fin
MIN. -
200 -
-
TYP. -
-
MAX. 1.17
50 15
140
UNIT V V ỌA ỌS
mV
- - 2.5 mA - 0.86 0.86
ᴱ/W - 1.07 1.07
1998. 2. 19
Revision No : 0
1/1
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