E
28F010 1024K (128K X 8) CMOS FLASH MEMORY
8
n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program 2 Second Chip-Program
n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current 5...
