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DZB27C

Sanyo Semicon Device

1.0W Zener Diodes

Ordering number :EN653F DZB6.2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features · Plastic molded st...


Sanyo Semicon Device

DZB27C

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Description
Ordering number :EN653F DZB6.2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features · Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V Package Dimensions unit:mm 1083 [DZB6.2 to DZB30] C:Cathode A:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Power Dissipation Junction Temperature Storage Temperature Symbol P Tj Tstg Conditions Ratings 1.0 150 –40 to +150 Unit W ˚C ˚C Electrical Characteristics at Ta = 25˚C Type No. Zener Characteristics Zener Voltage VZ [V] typ DZB6.2U 6.8C 7.5C 8.2C 9.1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 min 5.60 6.45 7.13 7.79 8.65 9.50 10.50 11.40 12.40 14.30 15.20 17.10 19.00 20.90 22.80 25.70 28.50 max 6.80 7.14 7.81 8.61 9.55 10.50 11.50 12.60 13.60 15.80 16.80 18.90 21.00 23.10 25.20 28.30 31.50 Dynamic Resistance [Ω] max 60 60 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Measured Current IZ [mA] –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 VF [V] max 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Forward Voltage Drop Measured Current [A] IR [µA] max –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –2.0 –3.0 –4.5 –4.9 –5.5 –6.0 –7.0 –8.0 –9.0 –10.0 –11.0 –13.0 –14.0 –16.0 –17.0 –19.0 –21.0 Reverse Current Measured Voltage [V] SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarter...




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