DX10N60R

DX10N60R/DX10N60F N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced DeXin’s MOSFET Technology, which provides low on- state resistance,rugged avalanche, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V @ Tjmax  ID = 10A @ VGS = 10V  RDS(ON) ≤ 0.7Ω @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 DX F Series TO-220F DX Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) TC=25oC TC=100oC TC=25oC Derate above 25 oC Junction and Storage Temperature Range * Id limited by maximum junction temperature Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg G S MDP10N60G MDF10N60G 600 660 ±30 10 10* 6.3 6.3* 40 40* 156 48 1.25 0.38 15.6 4.5 520 -55~150 ` Unit V V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Jun. 2010 Version 1.2 Symbol RθJA RθJC MDP10N60G 62.5 0.8 MDF10N60G 62.5 2.6 Unit oC/W 1 www.dexinchip.com Ordering Information Part Number DX10N60R DX10N60F Temp. Range -55...