DX10N60R/DX10N60F
N-Channel MOSFET 600V, 10A, 0.7Ω
General Description
These N-channel MOSFET are produced using advanc...
DX10N60R/DX10N60F
N-Channel
MOSFET 600V, 10A, 0.7Ω
General Description
These N-channel
MOSFET are produced using advanced DeXin’s
MOSFET Technology, which provides low on- state resistance,rugged avalanche, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V
VDS = 660V @ Tjmax
ID = 10A
@ VGS = 10V
RDS(ON) ≤ 0.7Ω @ VGS = 10V
Applications
Power Supply
PFC High Current, High Speed Switching
D
TO-220 DX F Series
TO-220F DX Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Drain-Source
Voltage @ Tjmax
Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Junction and Storage Temperature Range * Id limited by maximum junction temperature
Symbol VDSS
VDSS @ Tjmax VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
G
S
MDP10N60G MDF10N60G 600 660 ±30
10 10* 6.3 6.3* 40 40* 156 48 1.25 0.38
15.6 4.5 520 -55~150
`
Unit V
V V A A A W
W/ oC
mJ V/ns mJ
oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Jun. 2010 Version 1.2
Symbol RθJA RθJC
MDP10N60G 62.5 0.8
MDF10N60G 62.5 2.6
Unit oC/W
1 www.dexinchip.com
Ordering Information
Part Number DX10N60R DX10N60F
Temp. Range -55...