DWA010

Ordering number : EN2171C Silicon Epitaxial Planar Type DWA010 Ultrahigh-Speed Switching Diode Features Ideally suited for use in hybrid ICs because of ultrasmall package. High switching speed. Small interterminal capacitance. Absolute Maximum Ratings at Ta=25°C Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature VRM VR IFM IFM * Io Io * IFSM 1µs IFSM * P Tj Tstg * : Total value 85 80 300 450 100 150 4 6 200 125 –55 to +125 unit V V mA mA mA mA A A mW °C °C Electrical Characteristics at Ta=25°C Forward Voltage VF1 VF2 VF3 IR1 IR2 C trr min IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0V, f=1MHz IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp typ 0.61 0.74 max Reverse Current Interterminal Capacitance Reverse Recovery Time Marking : W8 1.20 0.1 0.5 2.0 4.0 unit V V V µA µA pF ns Reverse Recovery Time Test Circuit Package Dimensions 1164A (unit : mm) Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 82597GI/41096GI/93094MO/2279TA, TS No.2171-1/2 DWA010 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property ...