Ordering number : EN2171C
Silicon Epitaxial Planar Type
DWA010
Ultrahigh-Speed Switching Diode
Features
• Ideally sui...
Ordering number : EN2171C
Silicon Epitaxial Planar Type
DWA010
Ultrahigh-Speed Switching Diode
Features
Ideally suited for use in hybrid ICs because of ultrasmall package. High switching speed. Small interterminal capacitance.
Absolute Maximum Ratings at Ta=25°C
Peak Reverse
Voltage Reverse
Voltage Peak Forward Current Average Rectified Current Surge Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature VRM VR IFM IFM * Io Io * IFSM 1µs IFSM * P Tj Tstg * : Total value 85 80 300 450 100 150 4 6 200 125 –55 to +125
unit V V mA mA mA mA A A mW °C °C
Electrical Characteristics at Ta=25°C
Forward
Voltage VF1 VF2 VF3 IR1 IR2 C trr
min IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0V, f=1MHz IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp
typ 0.61 0.74
max
Reverse Current Interterminal Capacitance Reverse Recovery Time Marking : W8
1.20 0.1 0.5 2.0 4.0
unit V V V µA µA pF ns
Reverse Recovery Time Test Circuit
Package Dimensions 1164A (unit : mm)
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 82597GI/41096GI/93094MO/2279TA, TS No.2171-1/2
DWA010
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property ...