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RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
DU2880T
Absolute Maximum Ratings at 25°C
Thermal Resistance
Electrical Characteristics
I Parameter
Drain-Source Drain-...
