s2zz-f rgy== e -A5g =r-
---=-
an AMP company
RF MOSFET 2 - 175 MHz
Features
Power Transistor,
6OW, 28V
DU2860U
v2.0...
s2zz-f rgy== e -A5g =r-
---=-
an AMP company
RF
MOSFET 2 - 175 MHz
Features
Power Transistor,
6OW, 28V
DU2860U
v2.00
A
4Gl.
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
. .
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
IWA-COM, Inc.
North America:
Specifications Subject to Change Without Notice.
Tel. (800) 366-2266 Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
m
Europe:
Tel. +44 (1344) 869 595 Fax +I4 (1344) 300 020
RF
MOSFET Power Transistor, 6OW, 28V
v2.00
Typical Broadband Performance Curves
GAIN vs FREQUENCY
V,,=28 =z V 1,0=300 mA P,,,.,.=60 W 80 ,
EFFICIENCY
V,,=28
vs FREQUENCY
mA P,,~60 W
V I,,=300
I” 50
.
*
100
150
200
25
50
loo
150
200
FREQUENCY
(MHz)
FREOUENCY
(MHz)
POWER OUTPUT
V,,=20
vs POWER INPUT
mA 1
V I,,=300
”
0
0.5
1
1.5
2
2.5
2.75
3
POWER INPUT(W)
Specifications Subject to Change Without Notice.
M/A-COM,
North America: Tel. (800) Fax (800) 366-2266 618-8883 = Asia/Pacific: Tel. Fax +81 +81 (03) 3226-1671 (03) 3226-1451
n
Inc.
Europe:
Tel. Fax
+44 (1344) +44 (1344)
869 595 300 020
RF
MOSFET Power Transistor, 6OW, 28v
DU2860U
V2.00
Typical Device impedance
Frequency (MHz) 30 50 100 200
Z,,.,(OHMS) 9.0 - j 4.0 6.0 - j 5.8 4.0 - j 4.2 1.0 -j 1.0 V,,=28 V, I,,=300 mA, PO,,=60 Watts
Z LOAD (OHMS) 6.0 + j 0.0 5.0 + j 2.0 4.0 + j 3...
