DU2820S
RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS struct...
DU2820S
RF Power
MOSFET Transistor 200 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source
Voltage Gate-Source
Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 24 62.5 200 -55 to +150 2.8
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz) 30
ZIN (Ω) 17.5 - j13.0
ZLOAD (Ω) 16.0 - j2.5
50
15.0 - j15.5
15.0 - j4.0
100
8.0 - j14.0
12.0 - j6.0
200
5.5 - j8.0
9.25 - j6.0
VDD = 28V, IDQ = 100mA, POUT = 20 W
ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
Package Outline
Rev. V1
LETTER DIM A B C D E F...
