XF r an AMP company
=
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhanc...
XF r an AMP company
=
RF
MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor
Absolute Maximum Ratinas at 25°C
( Parameter 1 Drain-Source
Voltage Gate-Source Drain-Source
Voltage Current 1 Symbol ) V, V OS ‘0s PO 1 T, T ST0 eJC ) 1 1 Rating 65 20 2.8 35’ 200 -65to+150 2 1 1 Units I v
V
1 I
A W “C “C “Cl-W 1
Power Dissipation ( JunctionTemperature StorageTemperature Thermal Resistance
Typical Device \mpedance
Frequency (MHz) 30
50
*,, (OHMS)
27.0 -j 11.0
24.0 - j 15.0
*,onD (OHMS)
23.0 - j 3.0 19.0 - j 5.0
6.0 j 9.0 -j 5.0 14.0 ,I
100
18.0 -j 18.0 200
v&3 Z,, is the series equivalent 2 LOAD is the series equivalent input impedance load impedance
12.0 - j 19.0 V, 1,,=100 mA, Po,,=lO.O Watts
of the device from gate to source. as measured from drain to ground.
RF Test Fixture
+“r;s
+“m
INPUT
c2 Cl c3
c4 c5
C6 Rl L2 Ll L3 Ql 9-28
20 pF, UNELCU 500 pF, UNELCCI 1000 pF, UNELCO 5 uF ELECTROLYTIC 12K OHM 4 TURNS 2 TURNS 5 TURNS DU2810S M/A-COM, Inc.
Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 # Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
OF Nil, 16 AWG ON JO’ ID OF Nil. 16 AWG ON .35’ ID OF NO. 16 AWG UN 035’ ID
Specifications Subject to Change Without Notice.
North America:
Tel. (800) 366-2266 Fax (800) 618-8883
l
Asia/Pacific:
...
