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DTD743EE Datasheet

Part Number DTD743EE
Manufacturers Rohm
Logo Rohm
Description Digital transistors
Datasheet DTD743EE DatasheetDTD743EE Datasheet (PDF)

DTD743EE / DTD743EM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM zApplications Inverter, Interface, Driver zFeature 1) VCE (sat) is lower than the conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They als.

  DTD743EE   DTD743EE






Part Number DTD743EM
Manufacturers Rohm
Logo Rohm
Description Digital transistors
Datasheet DTD743EE DatasheetDTD743EM Datasheet (PDF)

DTD743EE / DTD743EM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM zApplications Inverter, Interface, Driver zFeature 1) VCE (sat) is lower than the conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They als.

  DTD743EE   DTD743EE







Digital transistors

DTD743EE / DTD743EM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM zApplications Inverter, Interface, Driver zFeature 1) VCE (sat) is lower than the conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. zStructure NPN epitaxial plannar silicon transistor (Resistor built-in type) zExternal dimensions (Unit : mm) DTD743EE 1.6 0.3 (3) 0.8 1.6 0.7 0.55 0.2 0.5 0.5 1.0 EMT3 JEITA No. (SC-75A) JEDEC No. 0.2 0.15 0.1Min. (2) (1) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : M23 DTD743EM 0.2 0.8 1.2 1.2 0.32 (3) 0.2 0.22 (1)(2) 0.4 0.4 0.8 0.13 0.5 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : M23 zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature ∗1 ∗2 zPackaging specifications Limits Package Unit V V mA mW C C EMT3 Taping TL 3000 VMT3 Taping T2L 8000 − Symbol VCC VIN IC (max) PD Tj Tstg DTD743EE DTD743EM 30 −10 to +20 200 150 150 −5.


2007-05-12 : 15KP1xA    15KP1x    15KP2x    15KP2xA    15KP3x    15KP3xA    30KPxxx    30KPAxxx    420E212    420E225   


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