DTD713ZE

DTD713ZE / DTD713ZM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD713ZE / DTD713ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTD713ZE 1.6 0.3 (3) 0.8 1.6 0.7 0.55 0.2 0.22 (1)(2) 0.8 1.2 zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. 0.2 0.5 0.5 1.0 EMT3 JEITA No. (SC-75A) JEDEC No. 0.2 0.1Min. (2) (1) 0.15 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : P21 DTD713ZM 0.2 1.2 0.32 (3) 0.4 0.4 0.13 0.5 zStructure NPN epitaxial plannar silicon transistor (Resistor built-in type) 0.8 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : P21 zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature ∗1 ∗2 zPackaging specifications Limits Package Unit V V mA mW C C EMT3 Taping VMT3 Taping Symbol VCC VIN IC (max) PD Tj Tstg DTD713ZE DTD713ZM 30 −5 to +10 200 150 150 −55 to +150 Packaging...