DatasheetsPDF.com

DTC143T Datasheet

Part Number DTC143T
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPN SILICON BIAS RESISTOR TRANSISTOR
Datasheet DTC143T DatasheetDTC143T Datasheet (PDF)

DTC114E SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. Th.

  DTC143T   DTC143T






Part Number DTC143T
Manufacturers UTC
Logo UTC
Description NPN DIGITAL TRANSISTOR
Datasheet DTC143T DatasheetDTC143T Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD DTC143T NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. NPN SILICON TRANSISTOR 3 2 3 1 SOT-23 EQUIVALENT CIRCUIT R1 C 2 3 1 SOT-323 B E 2 1 SOT-523 * Pb-free plating product number: DTC143TL ORDERING INFORMATION Order Number Package Normal Lead Free Plating www.DataSheet4U.com DTC143.

  DTC143T   DTC143T







NPN SILICON BIAS RESISTOR TRANSISTOR

DTC114E SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications. http://onsemi.com Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C (1.) Derate above 25°C Symbol VCBO VCEO IC PD 350 2.81 mW mW/°C Value 50 50 100 Unit Vdc Vdc mAdc 2 BASE COLLECTOR 3 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL 260 10 Value 357 –55 to +150 Unit °C/W °C 1 2 3 °C Sec DEVICE MARKING AND RESISTOR VALUES Device DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z Marking DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)