DTA115T

UNISONIC TECHNOLOGIES CO., LTD DTA115T PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)  FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input.  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number Package DTA115TG-AE3-R SOT-23 Note: Pin Assignment: E: Emitter B: Base C: Collector Pin Assignment 123 EBC Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-062.C DTA115T PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -50 V -5 V Collector Current Collector Power Dissipation IC -100 mA PC 200 mW Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55~+150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL SPECIFICATIONS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC=-50μA IC=-1mA -50 V -50 V Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage BVEBO IE=-50μA VCE(SAT) IC=-1m...