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DSF21060SV56

Dynex Semiconductor

Fast Recovery Diode

DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 APPLICATION...


Dynex Semiconductor

DSF21060SV56

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Description
DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 APPLICATIONS s Freewheel Diode. s Antiparallel Diode. s Inverters. s Choppers. KEY PARAMETERS VRRM 6000V IF(AV) 1690A IFSM 16000A Qr 1200µC trr 6.5µs FEATURES s Double Side Cooling. s High Surge Capability. s Low Recovery Charge. VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 6000 5900 5800 5700 5600 5500 Conditions DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DSF21060SV55 VRSM = VRRM + 100V Outline type code: V. See Package Details for further information. CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 1690 2655 2460 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 1090 1710 1520 A A A 1/9 DSF21060SV SURGE RATINGS Symbol IFSM I2t IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 125oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 125oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 100% VRRM, Tj = 125oC I2t for fusing A2s 1280 x 103 A2s kA 819.2 x 103 16.0 A2s kA Conditions Max. 12.8 Unit...




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