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DSEP8-06A

IXYS Corporation

HiPerFRED Epitaxial Diode with soft recovery

DSEP 8-06A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 600 V trr = 35 ns A C VRSM V 600 VRRM V...


IXYS Corporation

DSEP8-06A

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Description
DSEP 8-06A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 600 V trr = 35 ns A C VRSM V 600 VRRM V Type TO-220 AC C 600 DSEP 8-06A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 50 0.1 0.1 -55...+175 175 -55...+150 A A Features A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 60 0.4...0.6 2 Applications q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 60 0.25 1.42 2.10 2.5 0.5 mA mA V V K/W K/W ns q q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms TVJ = 100°C Advantages q 35 4.4 A q q Avalanche voltage rated for reliable operation Soft r...




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