DSEP 8-06A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 10 A VRRM = 600 V trr = 35 ns
A C
VRSM V 600
VRRM V...
DSEP 8-06A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 10 A VRRM = 600 V trr = 35 ns
A C
VRSM V 600
VRRM V
Type
TO-220 AC
C
600
DSEP 8-06A
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 135°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 35 10 50 0.1 0.1 -55...+175 175 -55...+150 A A Features A
q
mJ A °C °C °C W Nm g
q q q q q q
International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TC = 25°C mounting torque typical
60 0.4...0.6 2
Applications
q
q q
Symbol IR x
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C
Characteristic Values typ. max. 60 0.25 1.42 2.10 2.5 0.5 mA mA V V K/W K/W ns
q
q
q q q
VF y RthJC RthCH trr IRM
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms TVJ = 100°C
Advantages
q
35 4.4
A
q
q
Avalanche
voltage rated for reliable operation Soft r...