Fast Recovery Epitaxial Diode
Fast Recovery Epitaxial Diode (FRED)
DSEI 30
IFAVM = 30 A VRRM = 1000 V trr = 35 ns
VRSM V 1000 1000
VRRM V 1000 100...
Description
Fast Recovery Epitaxial Diode (FRED)
DSEI 30
IFAVM = 30 A VRRM = 1000 V trr = 35 ns
VRSM V 1000 1000
VRRM V 1000 1000
Type
A
C
TO-247 AD
Version A
ISOPLUS 247TM
Version AR
DSEI 30-10A DSEI 30-10AR
C A C (TAB)
C A Isolated back surface *
A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 30 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 TC = 25°C Mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab 138 0.8...1.2 20...120 2500 6 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm N V~ g
* Patent pending
Features
q
q q q q
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0
Version AR isolated and UL registered E153432
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md * FC VISOL ** Weight
* Verson A only; ** Version AR only
Applications
q
q q q
q
q q q
Symbol
Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 36 A;
Characteristic Values typ. max. 750 250 7 2 2.4 1.5 12.5 0.9 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
Antipa...
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