DSEA16-06AC

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface DSEA IFAV VRRM trr DSEA 16-06AC DSEC 16-06AC = 2x8 A = 600 V = 35 ns VRSM V 600 600 VRRM V 600 600 Type 1 DSEC 2 3 ISOPLUS220TM 1 2 3 Isolated back surface * 1 2 3 * Patent pending DSEA 16-06AC DSEC 16-06AC Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Conditions TC = 120°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 8 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C °C W V~ N / lb g Applications l l l l l l l l Features l 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 260 50 2500 11...65 / 2.5...15 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 l l Symbol IR  Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 60 0.25 1.42 2.10 3 0.6 35 3.5 4.4 µA mA V V l l ww w.D ata Sh eet 4U .co m l l l VF ‚ RthJC RthCH trr Antiparallel diode for high frequency switching devices Antisaturation diod...