DS1270Y

19-5615; Rev 11/10 www.maxim-ic.com DS1270Y/AB 16M Nonvolatile SRAM FEATURES  5 years minimum data retention in the absence of external power  Data is automatically protected during power loss  Unlimited write cycles  Low-power CMOS operation  Read and write access times of 70 ns  Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time  Full ±10% VCC operating range (DS1270Y)  Optional ±5% VCC operating range (DS1270AB)  Optional industrial temperature range of -40°C to +85°C, designated IND PIN ASSIGNMENT NC A20 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 VCC 35 A19 34 NC 33 A15 32 A17 31 WE 30 A13 29 A8 28 A9 27 A11 26 OE 25 A10 24 CE 23 DQ7 22 DQ6 21 DQ5 20 DQ4 19 DQ3 36-Pin ENCAPSULATED PACKAGE 740-mil EXTENDED PIN DESCRIPTION A0 – A20 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) - Ground NC - No Connect DESCRIPTION The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit...