SPICE MODEL: DMP3030SN
DMP3030SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
• • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
A D B G TOP VIEW S E D G H K J L C
SC-59 Dim A B C D
M
Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ⎯ 1.00 0.55 0.10 0°
Max 0.50 1.80 3.00 1.05 0.70 2..
P-Channel MOSFET
SPICE MODEL: DMP3030SN
DMP3030SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
• • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
A D B G TOP VIEW S E D G H K J L C
SC-59 Dim A B C D
M
Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ⎯ 1.00 0.55 0.10 0°
Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10 1.40 0.70 0.35 8°
Mechanical Data
• • • • • • • • Case: SC-59 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate)
E G H J K L
Drain
Gate
M α
Gate Protection Diode Source
ESD protected
All Dimensions in mm
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Pd RθJA Tj, TSTG Value -30 ±20 -0.7 -2.8 500 250 -65 to +150 Unit V V A A mW °C/W °C
Characteristic
Drain Current (Note 1) Steady State Pulsed Drain Current (Note 3) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2. .