DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
• Low...
DMP2160UW
P-CHANNEL ENHANCEMENT MODE
MOSFET
Please click here to visit our online spice models database.
Features
Low On-Resistance 100 mΩ @ VGS = -4.5V 120 mΩ @ VGS = -2.5V 160 mΩ @ VGS = -1.8V Very Low Gate Threshold
Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
NEW PRODUCT
SOT-323
Drain
D
Gate
G
Source
S
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings
Drain-Source
Voltage Gate-Source
Voltage Drain Current (Note 3) Pulsed Drain Current
@TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM Value -20 ±12 -1.5 -1.2 -10 Units V V A A
Characteristic
Thermal Characteristics
Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2. 3.
Symbol PD RθJA TJ, TSTG
Value 350 360 -55 to +150
Units mW °C/W °C
No purposefully added lead. Diodes I...
