NEW PRODUCT
DMP2066LSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low RDS(ON): • 40 mΩ @VGS = -4.5V • 70 mΩ @VGS = -...
NEW PRODUCT
DMP2066LSN
P-CHANNEL ENHANCEMENT MODE
MOSFET
Features
Low RDS(ON): 40 mΩ @VGS = -4.5V 70 mΩ @VGS = -2.5V
Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4)
Mechanical Data
Case: SC-59 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See page 4 Weight: 0.014 grams (approximate)
SC-59
Drain
D
Gate
TOP VIEW
Source
Internal Schematic
G
S
Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Drain-Source
Voltage Gate-Source
Voltage Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1)
TA = 25°C TA = 70°C
Symbol VDSS VGSS
ID
IDM IS
Value -20 ±12 -4.6 -3.7
-18 2.0
Unit V V
A
A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range
Symbol PD RθJA
TJ, TSTG
Value 1.25 100 -55 to +150
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on ...
