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DMN2114SN Datasheet

Part Number DMN2114SN
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description N-Channel Transistor
Datasheet DMN2114SN DatasheetDMN2114SN Datasheet (PDF)

DMN2114SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) A D B G TOP VIEW S E D G H K J L C SC-59 Dim A B C D M Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ⎯ 1.00 0.55 0.10 0° Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10.

  DMN2114SN   DMN2114SN






N-Channel Transistor

DMN2114SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) A D B G TOP VIEW S E D G H K J L C SC-59 Dim A B C D M Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ⎯ 1.00 0.55 0.10 0° Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10 1.40 0.70 0.35 8° Mechanical Data • • • • • • • • Case: SC-59 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate) Gate E G H Drain J K L M α Gate Protection Diode All Dimensions in mm Source ESD protected EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation @TA = 25°C unless otherwise specified Symbol VDSS Continuous Continuous Pulsed VGSS ID Pd RθJA Tj, TSTG Value 20 ±12 1.2 4.0 500 250 -55 to +150 Unit V V A mW °C /W °C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. Pulse width ≤300μS, duty cycle ≤2%. No purposef.


2007-05-17 : 2N7002E    2N7002E    AM29F017D    AM29LV002B    AM29SL160C    DMMT3906    EM562081    EM562161    EM565168    EM567168   


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