DMN2114SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
• • • • • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3)
A D B G TOP VIEW S E D G H K J L C
SC-59 Dim A B C D
M
Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ⎯ 1.00 0.55 0.10 0°
Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10.
N-Channel Transistor
DMN2114SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
• • • • • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3)
A D B G TOP VIEW S E D G H K J L C
SC-59 Dim A B C D
M
Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ⎯ 1.00 0.55 0.10 0°
Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10 1.40 0.70 0.35 8°
Mechanical Data
• • • • • • • • Case: SC-59 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate)
Gate
E G H
Drain
J K L M α
Gate Protection Diode
All Dimensions in mm
Source
ESD protected
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation
@TA = 25°C unless otherwise specified Symbol VDSS Continuous Continuous Pulsed VGSS ID Pd RθJA Tj, TSTG Value 20 ±12 1.2 4.0 500 250 -55 to +150 Unit V V A mW °C /W °C
Characteristic
Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2. 3.
Pulse width ≤300μS, duty cycle ≤2%. No purposef.