DMN2005LPK

DMN2005LPK Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate UNDER DEVELOPMENT DFN1006-3 G H Dim A A K Min 0.95 0.55 0.45 0.20 0.47 0 0.10 0.20 ¾ ¾ Max 1.075 0.675 0.55 0.30 0.53 0.05 0.20 0.30 ¾ ¾ Typ 1.00 0.60 0.50 0.25 0.50 0.03 0.15 0.25 0.35 0.40 B C D G H B C M Mechanical Data · · · · · · · Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Last Page Ordering & Date Code Information: See Last Page Drain D N L K L M N G D S TOP VIEW All Dimensions in mm Body Diode Gate Gate Protection Diode ESD protected Source EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RqJA Tj, TSTG Value 20 ±8 200 250 200 625 -65 to +150 Units V V mA mW °C/W °C Drain Current per element (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device moun...