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DME375A Datasheet

Part Number DME375A
Manufacturers GHz Technology
Logo GHz Technology
Description Pulsed Avionics
Datasheet DME375A DatasheetDME375A Datasheet (PDF)

R.A.063099 DME375A 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz www.datasheet4u.com GENERAL DESCRIPTION The DME375A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW Style 1 ABSOLUTE .

  DME375A   DME375A






Part Number DME375A
Manufacturers Alpha
Logo Alpha
Description Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
Datasheet DME375A DatasheetDME375A Datasheet (PDF)

www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com .

  DME375A   DME375A







Pulsed Avionics

R.A.063099 DME375A 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz www.datasheet4u.com GENERAL DESCRIPTION The DME375A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 875 Device Dissipation @25!C2 Maximum Voltage and Current 55 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 4.0 Collector Current (Ic) 30 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A !C !C ELECTRICAL CHARACTERISTICS @ 25!C SYMBOL Pout Pin Pg "c VSWR1 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1025 – 1150 MHz Vcc = 50 Volts PW = 10 #sec DF = 1% F = 1090 MHz MIN 375 85 6.5 40 TYP MAX UNITS W W dB % !:1 4.0 55 10 0.2 V V !C/W FUNCTIONAL CHARACTERISTICS @ 25!C BVebo BVces hFE $jc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 20 mA Ic = 25 mA Vce = 5V, Ic = 300 mA NOTE 1: At rated output power and pulse conditions 2. At rated pulse conditions . Initial Issue June 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RE.


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