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DMC1028UFDB

Diodes

MOSFET

DMC1028UFDB Product Summary COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Device BVDSS Q1 N-Channel 12V Q2 ...


Diodes

DMC1028UFDB

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DMC1028UFDB Product Summary COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Device BVDSS Q1 N-Channel 12V Q2 P-Channel -20V Description RDS(ON) max 25mΩ @ VGS = 4.5V 30mΩ @ VGS = 3.3V 32mΩ @ VGS = 2.5V 80mΩ @ VGS = -4.5V 90mΩ @ VGS = -3.3V 100mΩ @ VGS = -2.5V ID max TA = +25°C 6.0A 5.5A 5.3A -3.4A -3.2A -3.0A  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD HBM Protected up to 1.5KV, MM Protected up to 150V.  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Optimized for Point of Load (POL) Synchronous Buck Converter that steps down from 3.3V to 1V for core voltage supply to ASICs. Target applications are Ethernet Network Controllers used in:  Routers, Switchers, Network Interface Controllers (NICs)  Digital Subscriber Line (DSL)  Set-Top Boxes (STBs)  Case: U-DFN2020-6 (Type B)  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Terminals Connections: See Diagram Below  Weight: 0.0065 grams (Approximate) D1 D2 ESD PROTECTED U-DFN2020-6 (Type B) S2 G2 D2 D1 D1 ...




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