DM-111A
Magneto-Resistance Element For the availability of this product, please contact the sales office.
Description The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. Features • Low power consumption 38µW (Typ.) at VCC=5V • Low magnetic field and high sensitivity 75mVp-p (Typ.) at VCC=5.
Magneto-Resistance Element
DM-111A
Magneto-Resistance Element For the availability of this product, please contact the sales office.
Description The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. Features • Low power consumption 38µW (Typ.) at VCC=5V • Low magnetic field and high sensitivity 75mVp-p (Typ.) at VCC=5V and H=4000A/m • High reliability Ensured through silicon nitride protective filming Absolute Maximum Ratings (Ta=25°C) • Supply voltage VCC 10 • Operating temperature Topr –40 to +80 • Storage temperature Tstg –50 to +100 Recommended Operating Condition 5 M-102 (Plastic)
V °C °C V
Electrical Characteristics Item Total resistance Midpoint potential Output voltage Symbol RT VC VO Condition H=4000A/m, θ=45° VCC=5V , H=4000A/m Revoiving magnetic field VCC=5V , H=4000A/m Revoiving magnetic field Min. 500 2.47 30 Typ. 650 2.50 75 Max. 800 2.53
(Ta=25°C) Unit kΩ V mVp-p
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E94706A5X-TE
DM-111A
Equival.