DM-106B
Magnetoresistance Element For the availability of this product, please contact the sales office.
Description The...
DM-106B
Magnetoresistance Element For the availability of this product, please contact the sales office.
Description The DM-106B is a highly sensitive magnetoresistance element composed of an evaporated ferromagnetic alloy on a silicon substrate. (The element can be used for automatic shut off of tape recorders, as a contactless switch, and as a general detector of rotational motion.) Features Low power consumption M-110 (Plastic)
11 mW (Typ.) VCC=5 V Low magnetic field and high sensitivity 80 mVp-p (Typ.) VCC=5 V H=8000 A/m High reliability Ensured through silicon Nitride protective filming Structure Thin-film nickel-cobalt magnetic alloy on silicon substrate
Absolute Maximum Ratings (Ta=25 °C) Supply
voltage VCC 10 Operating temperature Topr –40 to +100 Storage temperature Tstg –50 to +125 Recommended Operating Supply
voltage 5
V °C °C V
Electrical Characteristics Item Total resistance Midpoint potential Output
voltage Symbol RT VC VO Condition VCC=5 V , H=8000 A/m Revoiving magnetic field VCC=5 V , H=8000 A/m Revoiving magnetic field VCC=5 V , H=8000 A/m Revoiving magnetic field Min. 1.4 2.45 60 Typ. 2.3 2.50 80
(Ta=25 °C) Max. 3.7 2.55 Unit kΩ V mVp-p
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