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DIM600DDM17-A000

Dynex Semiconductor

Dual Switch IGBT Module

www.DataSheet4U.com . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.1 September 2005 (LN24180) FEATURES • • • • 1...


Dynex Semiconductor

DIM600DDM17-A000

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www.DataSheet4U.com . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.1 September 2005 (LN24180) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AlN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 1700V 2.7V 600A 1200A High Thermal Cycling Capability (measured at the power busbars and not the auxiliary terminals) APPLICATIONS High Power Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DDM17-A000 is a dual switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Dual switch circuit diagram ORDERING INFORMATION Order As: DIM600DDM17-A000 Outline type code: D Note: When ordering, please use the whole part number. (See package details for further information) Fig. 2 Electrical connections (not to scale) Caution: This device is sensitive to electrostatic discharge. Users shou...




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