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DIM100PHM33-F000

Dynex Semiconductor

Half-Bridge IGBT

Replaces DS5764-5 DIM100PHM33-F000 Half Bridge IGBT Module DS5764-6 March 2021 (LN40739) FEATURES • 10µs Short Circuit...


Dynex Semiconductor

DIM100PHM33-F000

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Description
Replaces DS5764-5 DIM100PHM33-F000 Half Bridge IGBT Module DS5764-6 March 2021 (LN40739) FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates Lead Free Construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 3300V 2.8V 100A 200A * Measured at the auxiliary terminals APPLICATIONS High Reliability Inverters Motor Controllers Traction Auxiliaries The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM100PHM33-F000 is a half bridge 3300V soft punch through, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA). This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 1(E1/C2) 2(C1) 5(E1) 4(G1) 8(C1) 3(E2) 7(E2) 6(G2) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM100PHM33-F000 Note: When ordering, please use the complete part number Outline type code: P (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Use...




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