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DGSS10-06CC

IXYS Corporation

Gallium Arsenide Schottky Rectifier

www.DataSheet4U.com DGSS 10-06CC Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isola...


IXYS Corporation

DGSS10-06CC

File Download Download DGSS10-06CC Datasheet


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www.DataSheet4U.com DGSS 10-06CC Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data VRRM = 600 V (2x300V) IDC = 25 A CJunction = 10.7 pF Type DGSS 10-06CC Marking on product DGSS 10-06CC Circuit Package ISOPLUS220A 1 2 3 1 2 3 Diode Symbol VRRM/RSM VRRM/RSM IFAV IFAV IFSM Ptot Conditions (between terminal 1 and 3) Features Maximum Ratings 600 300 25 15 80 29 V V A A A W TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C Symbol VF IR IRM t rr CJ Conditions IF = 10 A; IF = 10 A; VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Characteristic Values min. typ. max. 1.7 1.2 25 1.4 23 10.7 2.1 V V 0.25 mA µA A ns pF 5.2 K/W GaAs Schottky Diode with Enhanced Barrier Height: lowest operating forward voltage drop due to additional injection of minority carriers high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off low leakage current ISOPLUS220TM Package: isolated back surface low coupling capacy between pins and heatsink enlarged creepage high reliability industry standard outline Applications ww w.D ata Sh eet 4U .co m IF = 5 A; -diF/dt = 150 A/µs; VR = 150 V; TVJ = 125°C VR = 150 V; TVJ = 125°C RthJC Data according to IEC 60747 and per diode unless otherwise specified Power Factor Correction (PF...




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