DG9N90

DG9N90 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG9N90N，， ，，，。 ，，。 DG9N90 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 900 9.0 1.4 15 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAXIMU...