DG830
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.0
General Description
DG830N，， ，，，。 ，，。
DG830 is an N-channel enhance...
DG830
N N-CHANNEL ENHANCEMENT MODE
MOSFET
：V1.0
General Description
DG830N，， ，，，。 ，，。
DG830 is an N-channel enhancement mode
MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS
VDSS ID
RDS(ON) Crss
500 4.5 1.5 14
V A Ω pF
Symbol Package
1 /8
ABSOLUTE MAXIMUM R...
