DG3N80

DG3N80 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG3N80N，， ，，，。 ，，。 DG3N80 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 800 3.0 4.8 12 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAXIMU...