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DG1N65S

Part Number	DG1N65S
Manufacturer	DGME
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Published	Apr 12, 2017
Detailed Description	DG1N65S N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N65SN，，，，，。，，。 DG1N65S is an N-channel e...
Datasheet	DG1N65S PDF File

Overview

DG1N65S N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG1N65SN，，，，，。，，。 DG1N65S is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 0.
5 12 3.
6 V A Ω pF Symbol Package 1 /8 ABSOLUTE MAX...

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