DG1N65

DG1N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N65N，， ，，，。 ，，。 DG1N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 1.3 9.5 5.0 V A Ω pF Symbol Package 1 /11 ABSOLUTE MAXI...