ESD Protection Diodes Silicon Epitaxial Planar
DF2B29FU
DF2B29FU
1. Applications
• ESD Protection
Note: This product i...
ESD Protection Diodes Silicon Epitaxial Planar
DF2B29FU
DF2B29FU
1. Applications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to,
voltage regulation.
2. Features
(1) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3. Packaging and Internal Circuit
USC
1: Pin 1 2: Pin 2
©2017 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-05
2017-12-22 Rev.2.0
DF2B29FU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge
voltage (IEC61000-4-2)(Contact) Electrostatic discharge
voltage(IEC61000-4-2)(Air)
VESD
(Note 1)
±25
kV
Electrostatic discharge
voltage(ISO10605)(Contact) Electrostatic discharge
voltage(ISO10605)(Air)
VESD
(Note 2)
±30
kV
Peak pulse power Peak pulse current Junction temperature Storage temperature
PPK IPP (Note 3) Tj Tstg
140 3
150 -55 to 150
W A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic...