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DC COMPONENTS CO., LTD.
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DC8050S
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAX...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DC8050S
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70)
o o
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PD TJ TSTG
o
C) Rating 25 20 5 700 625 +150 -55 to +150 Unit V V V mA mW
o o
Symbol
.050 Typ (1.27)
.022(0.56) .014(0.36) .100 Typ (2.54)
.022(0.56) .014(0.36)
3 2 1
.148(3.76) .132(3.36)
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 25 20 5 85 150 2%
Typ 170 -
Max 1 0.1 0.6 1 500 10
Unit V V V µA µA V V MHz pF
Test Conditions IC=10µA IC=1mA IE=10µA VCB=20V VEB=6V IC=0.5A, IB=50mA IC=150mA, VCE=1V IC=150mA, VCE=1V IC=500mA, VCE=1V IC=20mA, VCE=10V, f=100MHz VCB=10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation
Voltage Base-Emitter On
Voltage DC Current Gain
(1) (1)
VCE(sat) VBE(on) hFE1 hFE2 fT ...