DAP236U

DAP236U Diodes Band switching diode DAP236U !Applications High speed switching !External dimensions (Units : mm) DAP236U 2.0±0.2 1.3±0.1 0.65 0.65 0.3 0.9±0.1 0.6 0.3±0.1 0.15±0.05 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 !Circuit !Absolute maximum ratings (Ta=25°C) Parameter DC reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR P Tj Tstg Limits 35 150 125 −55∼+125 Unit V mW ˚C ˚C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Forward operating resistance Symbol VF IR CT rF Min. − − − − Typ. − − − − Max. 1.0 10 1.2 0.90 Unit V nA pF Ω IF=10mA VR=25V Conditions VR=6V, f=1MHz IF=2mA, f=100MHz 0.1Min. X !Features 1) Multiple diodes with common anode configuration. (UMD3) 2) High reliability. 1.25±0.1 2.1±0.1 0∼0.1 DAP236U Diodes !Electrical characteristic curves (Ta=25°C) 1 FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR (nA) 10.0 CAPACITANCE BETWEEN TERMINALS : CT (pF) 10 20 30 40 50 3 100m 10m 1m 100µ 10µ 1µ 100n 0.4 2 1.0 1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0 0 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics FORWARD OPERATING RESISTANCE : rF (Ω) 1.0 f=100MHz 0.5 0.2 0 1 2 5 10 FORWARD CURRENT : IF (mA...