D965ASS

UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR  FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V  APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit  ORDERING INFORMATION Order Number D965SSG-x-AE3-R D965ASSG-x-AE3-R Package SOT-23 SOT-23 Pin Assignment 123 EBC EBC Packing Tape Reel Tape Reel  MARKING UTC D965SS UTC D965ASS D65AG www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., LTD 1 of 4 QW-R206-016.D D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base voltage Collector-Emitter Voltage Emitter-Base Voltage Collector dissipation(Ta=25C) Collector current Junction Temperature Storage Temperature D965SS D965ASS SYMBOL VCBO VCEO VEBO Pc IC TJ TSTG RATINGS 40 20 30 7 750 5 150 -65 ~ +150  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown D965SS voltage D965ASS Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Current gain bandwidth product Output capacitance SYMBOL TEST CONDITIONS BVCBO IC=100μA, IE=0 BVCEO IC=1mA, IB=0 BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) fT Cob IC =0, IE=10μA VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=1mA VCE=2V, ...