D882P

DATA SHEET NPN SILICON POWER TRANSISTOR 2SD882 NPN SILICON POWER TRANSISTOR DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 3.8 ±0.2 12.0 MAX. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 2.8 MAX. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature −55 to +150°C 150°C Maximum Maximum Power Dissipations Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Maximum Voltages and Currents (TA = 25°C) 1.0 W 10 W VCBO Collector to Base Voltage 40 V VCEO VEBO Collector to Emitter Voltage Emitter to Base Voltage 30 V 5.0 V IC(DC) Collector Current (DC) IC(pulse)Note Collector Current (pulse) Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% 3.0 A 7.0 A 12 TYP. 2.5 ±0.2 13.0 MIN. 0.55 +0.08 –0.05 0.8 +0.08 –0.05 2.3 TYP. 2.3 TYP. 1.2 TYP. 1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC SYMBOL TEST CONDITIONS DC Current Gain DC Current Gain hFE1 hFE2 VCE = 2.0 V, IC = 20 mANote VCE = 2.0 V, IC = 1.0 ANote Gain Bandwidth Produ...