2SD717
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors in a...
2SD717
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL PARAMETER Collector-emitter
voltage peak value VCBO Collector-emitter
voltage (open base) VCEO Collector current (DC) IC www.DataSheet4U.com Collector current peak value ICM Total power dissipation Ptot Collector-emitter saturation
voltage VCEsat Diode forward
voltage VF Fall time tf CONDITIONS VBE = 0V
TO-3P(I)D
TYP MAX 70 70 10 80 2 2.0 1.0UNIT V V A A W V V s
Tmb 25 IC = 4.0A; IB=0.4A IF = 3.5A IC=4A,IB1=-IB2=0.4A,VCC=30V
1.5 0.4
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55 -
Tmb 25
MAX 70 70 5 10 2.5 80 150 150
UNIT V V V A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf
PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown
voltage Collector-emitter saturation
voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time
CONDITIONS VCB=70V VEB=5V IC=1mA IC = 4.0A; IB = 0.4A IC = 1A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V IC=4A,IB1=-IB2=...
