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DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION...
www.DataSheet4U.com
DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER
AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD560 is a mold power transistor developed for lowfrequency power
amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals.
FEATURES C-to-E reverse diode inserted Low collector saturation
voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Collector current (pulse)
Base current (DC) Total power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
IB(DC) PT
Tj Tstg
Conditions
Ratings Unit
150 V
100 V
7.0 V
Data±S5h.0eet4U.cAom
PW ≤ 10 ms, duty cycle ≤ 50%
±8.0
A
0.5 A
TC = 25°C
30 W
TA = 25°C
1.5 W
150 °C
−55...